Research - SiGe grown by LEPECVD

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Summary

I'm working on the LEPECVD system with Prof. Hans von Känel. It's a machine for growing silicon-germanium (SiGe) layers epitaxially on Si substrates at rates of up to 10nms^-1. That's more than 10 times faster than most other growth systems.

I was at the Physics Department of the Eidgenössische Technische Hochschule Zürich (Hönggerberg) in the Laboratorium für Festkörperphysik (Laboratory for Solid State Physics) for a bit. Now I'm with him at the L-NESS, Politecnico di Milano in Como.

Publications

Publications featuring material made by the LEPECVD system, with the most recent first.

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Ge/SiGe Multiple Quantum Wells for Optical Applications

D. Chrastina, A. Neels, M. Bonfanti, M. Virgilio, G. Isella, E. Grilli, M. Guzzi, G. Grosso, H. Sigg, and H. von Känel
IEEE 5^th Int. Conf. Group IV Photonics 194-196 (2008).

Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

High Speed Ge Photodetector Integrated on Silicon-on-Insulator Operating at Very Low Bias Voltage

Johann Osmond, Giovanni Isella, Daniel Chrastina, Rolf Kaufmann, and Hans von Känel
IEEE 5^th Int. Conf. Group IV Photonics 164-166 (2008).

SiGe/Si Quantum Cascade Structures Deposited by Low-Energy Plasma-Enhanced CVD

G. Isella, G. Matmon, A. Neels, E. Müller, M. Califano, D. Chrastina, H. von Känel, L. Lever, Z. Ikonić, R. W. Kelsall, and D. J. Paul
IEEE 5^th Int. Conf. Group IV Photonics 29-31 (2008).

M. Bonfanti, E. Grilli, M. Guzzi, D. Chrastina, G. Isella, H. von Känel, and H. Sigg
Physica E in press (2008).

This article may be found at http://dx.doi.org/10.1016/j.physe.2008.08.052.

Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

Johann Osmond, Giovanni Isella, Daniel Chrastina, Rolf Kaufmann, and Hans von Känel
Thin Solid Films 517 (1) 380-382 (2008).

This article may be found at http://dx.doi.org/10.1016/j.tsf.2008.08.036.

Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

S. L. Rumyantsev, K. Fobelets, D. Veksler, T. Hackbarth, and M. S. Shur
Semicond. Sci. Technol. 23 (10) 105001 (2008).

This article may be found at http://stacks.iop.org/SST/23/105001.

DOI: 10.1088/0268-1242/23/10/105001

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

M. Bonfanti, E. Grilli, M. Guzzi, M. Virgilio, G. Grosso, D. Chrastina, G. Isella, H. von Känel, and A. Neels
Phys. Rev. B 78 (4) 041407(R) (2008).

This article may be found at http://link.aps.org/abstract/PRB/v78/e041407.

DOI: 10.1103/PhysRevB.78.041407

Gate-controlled rectifying barrier in a two-dimensional hole gas

Roman Sordan, Alessio Miranda, Johann Osmond, Davide Colombo, Daniel Chrastina, Giovanni Isella, and Hans von Känel
Nanotechnology 19 (33) 335201 (2008).

This article may be found at http://stacks.iop.org/Nano/19/335201.

DOI: 10.1088/0957-4484/19/33/335201

An experimental and theoretical investigation of a magnetically confined dc plasma discharge

Maurizio Rondanini, Carlo Cavallotti, Daria Ricci, Daniel Chrastina, Giovanni Isella, Tamara Moiseev, and Hans von Känel
J Appl. Phys. 104 (01) 013304 (2008).

This article may be found at http://link.aip.org/link/?jap/104/013304.

DOI: 10.1063/1.2948927

Nanostructures in silicon investigated by atomic force microscopy and surface photovoltage spectroscopy

A. Cavallini and D. Cavalcoli
Scanning 30 (4) 358-363 (2008).

This article may be found at http://dx.doi.org/10.1002/sca.20110.

Si/SiGe bound-to-continuum quantum cascade terahertz emitters

D. J. Paul, G. Matmon, L. Lever, Z. Ikonić, R. W. Kelsall, D. Chrastina, G. Isella, and H. von Känel
Proc. of SPIE 6996 69961C (2008).

This article may be found at http://link.aip.org/link/?psi/6996/69961C.

DOI: 10.1117/12.785529

Phonon strain shift coefficients in Si_1-xGe_x alloys

F. Pezzoli, E. Bonera, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl and G. Bauer
J Appl. Phys. 103 (09) 093521 (2008).

This article may be found at http://link.aip.org/link/?jap/103/093521.

DOI: 10.1063/1.2913052

SiGe wet chemical etchants with high compositional selectivity and low strain sensitivity

M. Stoffel, A. Malachias, T. Merdzhanova, F. Cavallo, G. Isella, D. Chrastina, H. von Känel, A. Rastelli and O. G. Schmidt
Semicond. Sci. Technol. 23 (8) 085021 (2008).

This article may be found at http://stacks.iop.org/SST/23/085021.

DOI: 10.1088/0268-1242/23/8/085021

Epitaxial Si-Ge Heterostructures and Nanostructures for Optical and Electrical Applications

H. von Känel, M. Bollani, M. Bonfanti, D. Chrastina, D. Colombo, A. Dommann, M. Guzzi, G. Isella, A. Miranda, E. Müller, A. Neels, J. Osmond, B. Rössner, R. Sordan, and F. Traversi.
Proceedings of the 2nd conference on Nanostructures, 11-14 March 2008.

Structural Homogeneity of nc-Si Films Grown by Low-Energy PECVD

A. Le Donne, S. Binetti, G. Isella and S. Pizzini
Electrochemical and Solid-State Letters 11 (6) P5-P7 (2008).

This article may be found at http://dx.doi.org/10.1149/1.2894906.

Structural characterization on nc-Si films grown by low-energy PECVD on different substrates

A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri and S. Pizzini
Applied Surface Science 254 (9) 2804-2808 (2008).

This article may be found at http://dx.doi.org/10.1016/j.apsusc.2007.10.025.

Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications

A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri and S. Pizzini
Solid State Phenom. 131-133 33-38 (2008).

Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy

D. Cavalcoli, M. Rossi, A. Tomasi, A. Cavallini, D. Chrastina and G. Isella
Solid State Phenom. 131-133 547-552 (2008).

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Defect analysis of hydrogenated nanocrystalline Si thin films

A. Cavallini, D. Cavalcoli, M. Rossi, A. Tomasi, S. Pizzini, D. Chrastina and G. Isella
Physica B 401-402 519-522 (2007).

This article may be found at http://dx.doi.org/10.1016/j.physb.2007.09.012.

Measurement of carrier lifetime and interface recombination velocity in Si-Ge waveguides

A. Trita, I. Cristiani, V. Degiorgio, D. Chrastina and H. von Känel
Appl. Phys. Lett. 91 (4) 041112 (2007).

This article may be found at http://link.aip.org/link/?apl/91/041112.

DOI: 10.1063/1.2760133

Measurement of the lifetime of photo-generated free carriers in SiGe waveguides

A. Trita, I. Cristiani, V. Degiorgio, M. Döbeli, D. Chrastina and H. von Känel
J. Nonlinear Opt. Phys. 16 (2) 207-216 (2007).

This article may be found at http://dx.doi.org/10.1142/S0218863507003718.

Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates

D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, S. Marchionna, M. Bonfanti, A. Fedorov, H. von Känel, G. Isella and E. Müller
J Appl. Phys. 101 (10) 103519 (2007).

This article may be found at http://link.aip.org/link/?jap/101/103519.

DOI: 10.1063/1.2729477

Resonator fabrication for switchable two-color MIR detectors based on p-type SiGe quantum cascade injectors

M. Grydlik, P. Rauter, T. Fromherz, C. Falub, D. Gruetzmacher, G. Isella, and G. Bauer
AIP Conf. Proc. 893 1411-1412 (2007).

This article may be found at http://link.aip.org/link/?apc/893/1411.

DOI: 10.1063/1.2730433

Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET

N. Zerounian, M. Enciso-Aguilar, T. Hackbarth, H.-J. Herzog and F. Aniel
Solid State Electronics 51 (3) 449-459 (2007).

This article may be found at http://dx.doi.org/10.1016/j.sse.2007.01.027.

Effective mass measurement: the influence of hole band nonparabolicity in SiGe/Ge quantum wells

Benjamin Rössner, Hans von Känel, Daniel Chrastina, Giovanni Isella and Bertram Batlogg
Semicond. Sci. Technol. 22 (1) S191-S194 (2007).

This article may be found at http://stacks.iop.org/SST/22/S191.

DOI: 10.1088/0268-1242/22/1/S45

Erratum to “Raman spectroscopy of Si_1-xGe_x epilayers”

F. Pezzoli, Lucio Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl and G. Bauer
Mat. Sci. Eng. B 137 (1-3) 315 (2007).

This article may be found at http://dx.doi.org/10.1016/j.mseb.2006.02.057.

Heterojunction photodiodes fabricated from Ge/Si (100) layers grown by low-energy plasma-enhanced CVD

G. Isella, J. Osmond, M. Kummer, R. Kaufmann and H. von Känel
Semicond. Sci. Technol. 22 (1) S26-S28 (2007).

This article may be found at http://stacks.iop.org/SST/22/S26.

DOI: 10.1088/0268-1242/22/1/S06

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Photocurrent and transmission spectroscopy of direct-gap interband transitions in Ge/SiGe quantum wells

S. Tsujino, H. Sigg, G. Mussler, D. Chrastina and H. von Känel
Appl. Phys. Lett. 89 (26) 262119 (2006).

This article may be found at http://link.aip.org/link/?apl/89/262119.

DOI: 10.1063/1.2425032

Strain-induced shift of phonon modes in Si_1-xGe_x alloys

F. Pezzoli, E. Grilli, M. Guzzi, S. Sanguinetti, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl and G. Bauer
Mat. Sci. Semicond. Process. 9 (4-5) 541-545 (2006).

This article may be found at http://dx.doi.org/10.1016/j.mssp.2006.08.046.

Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures

Benjamin Rössner, Bertram Batlogg, Hans von Känel, Daniel Chrastina and Giovanni Isella
Mat. Sci. Semicond. Process. 9 (4-5) 777-780 (2006).

This article may be found at http://dx.doi.org/10.1016/j.mssp.2006.08.022.

Electron-beam-induced current imaging for the characterisation of structural defects in Si_1-xGe_x films grown by LE-PECVD

A. Virtuani, S. Marchionna, M. Acciarri, G. Isella and H. von Kaenel
Mat. Sci. Semicond. Process. 9 (4-5) 798-801 (2006).

This article may be found at http://dx.doi.org/10.1016/j.mssp.2006.08.064.

Defect imaging of SiGe strain relaxed buffers grown by LEPECVD

S. Marchionna, A. Virtuani, M. Acciarri, G. Isella and H. von Kaenel
Mat. Sci. Semicond. Process. 9 (4-5) 802-805 (2006).

This article may be found at http://dx.doi.org/10.1016/j.mssp.2006.09.003.

Study of thermal strain relaxation in GaAs grown on Ge/Si substrates

D. Colombo, E. Grilli, M. Guzzi, S. Sanguinetti, A. Fedorov, H. von Känel and G. Isella
J. Luminescence 121 (2) 375-378 (2006).

This article may be found at http://dx.doi.org/10.1016/j.jlumin.2006.08.027.

Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications

S. Pizzini, M. Acciarri, S. Binetti, D. Cavalcoli, A. Cavallini, D. Chrastina, L. Colombo, E. Grilli, G. Isella, M. Lancin, A. Le Donne, A. Mattoni, K. Peter, B. Pichaud, E. Poliani, M. Rossi, S. Sanguinetti, M. Texier and H. von Känel
Mat. Sci. Eng. B 134 (2-3) 118-124 (2006).

This article may be found at http://dx.doi.org/10.1016/j.mseb.2006.06.038.

Logic gates with a single Hall bar heterostructure

R. Sordan, A. Miranda, J. Osmond, D. Chrastina, G. Isella and H. von Känel
Appl. Phys. Lett. 89 (15) 152122 (2006).

This article may be found at http://link.aip.org/link/?apl/89/152122.

DOI: 10.1063/1.2362989

Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure

I. B. Berkutov, Yu. F. Komnik, V. V. Andrievskii, O. A. Mironov, M. Myronov and D. R. Leadley
Low Temp. Phys. 32 (7) 683-688 (2006).

This article may be found at http://link.aip.org/link/?ltp/32/683.

DOI: 10.1063/1.2216282

2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

Benjamin Rössner, Hans von Känel, Daniel Chrastina, Giovanni Isella and Bertram Batlogg
Thin Solid Films 508 (1-2) 351-354 (2006).

This article may be found at http://dx.doi.org/10.1016/j.tsf.2005.07.341.

Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

R. Ginige, B. Corbett, M. Modreanu, C. Barrett, J. Hilgarth, G. Isella, D. Chrastina and H. von Känel
Semicond. Sci. Technol. 21 (6) 775-780 (2006).

This article may be found at http://stacks.iop.org/SST/21/775.

DOI: 10.1088/0268-1242/21/6/011

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Microwave Noise Performance and Modeling of SiGe-Based HFETs

Mauro Enciso Aguilar, Paul Crozat, Thomas Hackbarth, Hans-Joest Herzog and Frédéric Aniel
IEEE Trans. Electron. Devices 52 (11) 2409-2415 (2005).

This article may be found at http://ieeexplore.ieee.org/.

DOI: 10.1109/TED.2005.857170

X-Ray Investigation of Thick Epitaxial GaAs/InGaAs Layers on Ge Pseudosubstrates

A. Rehman Khan, K. Mundboth, J. Stangl, G. Bauer, H. von Känel, A. Fedorov, G. Isella and D. Colombo
IEEE International Conference on Emerging Technologies 323-328 (2005).

This article may be found at http://ieeexplore.ieee.org/.

Electron-electron interaction in p-SiGe/Ge quantum wells

Benjamin Rössner, Hans von Känel, Daniel Chrastina, Giovanni Isella and Bertram Batlogg
Mat. Sci. Eng. B 124-125 184-187 (2005).

This article may be found at http://dx.doi.org/10.1016/j.mseb.2005.08.037.

Raman spectroscopy of Si_1-xGe_x epilayers

F. Pezzoli, Lucio Martinelli, E. Grilli, M. Guzzi, S. Sanguinetti, M. Bollani, D. Chrastina, G. Isella, H. von Känel, E. Wintersberger, J. Stangl and G. Bauer
Mat. Sci. Eng. B 124-125 127-131 (2005).

This article may be found at http://dx.doi.org/10.1016/j.mseb.2005.08.057.

InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates

I. Sagnes, Y. Chriqui, G. Saint-Girons, S. Bouchoule, D. Bensahel, O. Kermarrec, G. Isella and H. von Kaenel
Second IEEE International Conference on Group IV Photonics 207-209 (2005).

This article may be found at http://ieeexplore.ieee.org/.

LEPECVD - a Production Technique for SiGe MOSFETs and MODFETs

D. Chrastina, B. Rössner, G. Isella, H. von Känel, J. P. Hague, T. Hackbarth, H.-J. Herzog, K.-H. Hieber and U. König
in Ehrenfried Zschech, Caroline Whelan and Thomas Mikolajick (editors), Materials for Information Technology 16-28 (2005).

SJ and TJ GaAs concentrator solar cells on Si virtual wafers

G. Gabetta, C. Flores, R. Campesato, C. Casale, G. Timó, G. Smekens, J. Vanbegin, H. von Kanel and G. Isella
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 850-853 (2005).

This article may be found at http://ieeexplore.ieee.org/.

Nanocrystalline silicon film grown by Low Energy Plasma Enhanced Chemical Vapor Deposition for optoelectronic applications

S. Binetti, M. Acciarri, M. Bollani, L. Fumagalli, H. von Känel and S. Pizzini
Thin Solid Films 487 (1-2) 19-25 (2005).

This article may be found at http://dx.doi.org/10.1016/j.tsf.2005.01.028.

Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

D. Chrastina, G. Isella, M. Bollani, B. Rössner, E. Müller, T. Hackbarth, E. Wintersberger, Z. Zhong, J. Stangl and H. von Känel
J. Cryst. Growth 281 (2-4) 281-289 (2005).

This article may be found at http://dx.doi.org/10.1016/j.jcrysgro.2005.04.040.

Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications

M. Acciarri, S. Binetti, M. Bollani, A. Comotti, L. Fumagalli, S. Pizzini and H. von Känel
Solar Energy Materials & Solar Cells 87 (1-4) 11-24 (2005).

This article may be found at http://dx.doi.org/10.1016/j.solmat.2004.09.012.

Investigation of the injection velocity of holes in strained Si pMOSFETs

G. Nicholas, T. J. Grasby, E. H. C. Parker, T. E. Whall, D. J. Paul, A. G. R. Evans and H. von Känel
Semicond. Sci. Technol. 20 (5) L20-L22 (2005).

This article may be found at http://stacks.iop.org/0268-1242/20/L20.

DOI: 10.1088/0268-1242/20/5/L02

Fe thin films grown on single-crystal and virtual Ge(001) substrates

M. Cantoni, M. Riva, G. Isella, R. Bertacco and F. Ciccacci
J. Appl. Phys. 97 (9) 093906 (2005).

This article may be found at http://link.aip.org/link/?jap/97/093906.

DOI: 10.1063/1.1887836

Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate

Y. Chriqui, G. Saint-Girons, G. Isella, H. von Kaenel, S. Bouchoule and I. Sagnes
Optical Materials 27 (5) 846-850 (2005).

This article may be found at http://dx.doi.org/10.1016/j.optmat.2004.08.022.

Stability of shuffle and glide dislocation segments with increasing misfit in Ge/Si_1-xGe_x(001) epitaxial layers

A. Marzegalli, F. Montalenti and Leo Miglio
Appl. Phys. Lett. 86 (4) 041912 (2005).

This article may be found at http://link.aip.org/link/?apl/86/041912.

DOI: 10.1063/1.1856145

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Comment on “Smooth relaxed Si_0.75Ge_0.25 layers on Si(001) via in situ rapid thermal annealing” [Appl. Phys. Lett. 83, 4321 (2003)]

D. Chrastina
Appl. Phys. Lett. 85 (22) 5469 (2004).

This article may be found at http://link.aip.org/link/?apl/85/5469.

DOI: 10.1063/1.1828574

High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition

H. von Känel, D. Chrastina, B. Rössner, G. Isella, J. P. Hague and M. Bollani
Microelectronic Engineering 76 (1-4) 278-283 (2004).

This article may be found at http://dx.doi.org/10.1016/j.mee.2004.07.029.

Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature

A. Marzegalli, F. Montalenti, M. Bollani, Leo Miglio, G. Isella, D. Chrastina and H. von Känel
Microelectronic Engineering 76 (1-4) 289-295 (2004).

This article may be found at http://dx.doi.org/10.1016/j.mee.2004.07.031.

High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition

D. Chrastina, G. Isella, B. Rössner, M. Bollani, E. Müller, T. Hackbarth and H. von Känel
Thin Solid Films 459 (1-2) 37-40 (2004).

This article may be found at http://dx.doi.org/10.1016/j.tsf.2003.12.090.

(As featured at PhysOrg.com.)

Ge quantification of high Ge content relaxed buffer layers by RBS and SIMS

F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, M. Berti, J. Stangl, Z Zhong, G Bauer, G. Isella, and H. von Känel
Nuclear Instruments and Methods in Physics Research B 226 (3) 301-308 (2004).

This article may be found at http://dx.doi.org/10.1016/j.nimb.2004.06.030.

Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers

F. Sánchez-Almazán, E. Napolitani, A. Carnera, A. V. Drigo, G. Isella, H. von Känel and M. Berti
Applied Surface Science 231-232 704-707 (2004).

This article may be found at http://dx.doi.org/10.1016/j.apsusc.2004.03.193.

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

G. Isella, D. Chrastina, B. Rössner, T. Hackbarth, H.-J. Herzog, U. König and H. von Känel
Solid State Electronics 48 (8) 1317-1323 (2004).

This article may be found at http://dx.doi.org/10.1016/j.sse.2004.01.013.

Strained Si HFETs for microwave applications: state-of-the-art and further approaches

M. Enciso Aguilar, M. Rodriguez, N. Zerounian, F. Aniel, T. Hackbarth, H.-J. Herzog, U. König, S. Mantl, B. Holländer, D. Chrastina, G. Isella, H. von Känel, K. Lyutovich, M. Oehme
Solid State Electronics 48 (8) 1443-1452 (2004).

This article may be found at http://dx.doi.org/10.1016/j.sse.2004.01.021.

Scattering mechanisms in high-mobility strained Ge channels

B. Rössner, D. Chrastina, G. Isella and H. von Känel
Appl. Phys. Lett. 84 (16) 3058-3060 (2004).

This article may be found at http://link.aip.org/link/?apl/84/3058.

DOI: 10.1063/1.1707223

Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data

Lucio Martinelli, A. Marzegalli, P. Raiteri, M. Bollani, F. Montalenti, Leo Miglio, D. Chrastina, G. Isella and H. von Känel
Appl. Phys. Lett. 84 (15) 2895-2897 (2004).

This article may be found at http://link.aip.org/link/?apl/84/2895.

DOI: 10.1063/1.1705727

Dislocation density and structure in Si_1-xGe_x buffer layers deposited by LEPECVD

M. Bollani, E. Müller, G. Isella, S. Signoretti, D. Chrastina and H. von Känel
Microscopy of Semiconducting Materials 2003: Inst. Phys. Conf. Ser. No 180 247-250 (2004).

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Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition

T. Hackbarth, H.-J. Herzog, K.-H. Hieber, U. König, M. Bollani, D. Chrastina and H. von Känel
Appl. Phys. Lett. 83 (26) 5464-5466 (2003).

This article may be found at http://link.aip.org/link/?apl/83/5464.

(As featured at PhysOrg.com.)

DOI: 10.1063/1.1636820

Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOCVD on LE-PECVD Ge/Si virtual substrate

Y. Chriqui, G. Saint-Girons, S. Bouchoule, J.-M. Moison, G. Isella, H. von Kaenel and I. Sagnes
Electron. Lett. 39 (23) 1658-1660 (2003).

This article may be found at http://ieeexplore.ieee.org/.

DOI: 10.1049/el:20030926

Structural Characterization of Thick, High-Quality Epitaxial Ge on Si Substrates Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

Shawn G. Thomas, Sushil Bharatan, Robert E. Jones, Rainer Thoma, Thomas Zirkle, N. V. Edwards, Ran Liu, Xiang Dong Wang, Qianghua Xie, Carsten Rosenblad, Juergen Ramm, Giovanni Isella, and Hans von Känel
J. Electron. Mater. 32 (9) 976-980 (2003).

This article is available through http://www.tms.org/TMSHome.html

32 GHz MMIC distributed amplifier based on n-channel SiGe MODFETs

P. Abele, M. Zeuner, I. Kallfass, J. Müller, H. L. Hiwilepo, T. Hackbarth, D. Chrastina, H. von Känel, U. König, and H. Schumacher
Electron. Lett. 39 (20) 1448-1449 (2003).

This article may be found at http://ieeexplore.ieee.org/.

DOI: 10.1049/el:20030953

Compressively strained Ge channels on relaxed SiGe buffer layers

M. Bollani, E. Müller, S. Signoretti, C. Beeli, G. Isella, M. Kummer and H. von Känel
Mat. Sci. Eng. B 101 (1-3) 102-105 (2003).

This article may be found at http://dx.doi.org/10.1016/S0921-5107(02)00662-1.

Effective mass in remotely doped Ge quantum wells

Benjamin Rößner, Giovanni Isella and Hans von Känel
Appl. Phys. Lett. 82 (5) 754-756 (2003).

This article may be found at http://link.aip.org/link/?apl/82/754.

DOI: 10.1063/1.1541101

DC and high frequency performance of 0.1μm n-type Si/Si_0.6Ge_0.4 MODFET with f_MAX=188GHz at 300K and f_MAX=230GHz at 50K

M. Enciso-Aguilar, F. Aniel, P. Crozat, R. Adde, H.-J. Herzog, T. Hackbarth, U. König and H. von Känel
Electron. Lett. 39 (1) 149-151 (2003).

This article may be found at http://ieeexplore.ieee.org/.

DOI: 10.1049/el:20031182 (?)

Fabrication and Modeling of Gigahertz Photodetectors in Heteroepitaxial Ge-on-Si Using a Graded Buffer Layer Deposited by Low Energy Plasma Enhanced CVD

R. E. Jones, S. G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. von Känel, J. Oh, and J. C. Campbell
Electron Devices Meeting (IEDM) 2002 793-796.

This article may be found at http://ieeexplore.ieee.org/.

DOI: 10.1109/IEDM.2002.1175957

Posters

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Effective Mass Measurement: Influence of Hole Band Nonparabolicity in SiGe/Ge Quantum wells: Benjamin Rössner, Hans von Känel, Daniel Chrastina, Giovanni Isella and Bertram Batlogg
ISTDM 2006, Princeton, USA, May 2006.
Electron-electron interaction in p-SiGe/Ge quantum wells: B. Rössner, H. von Känel, D. Chrastina, G. Isella and B. Batlogg
EMRS Spring, Strasbourg, France, June 2005.
2-D Hole Gas with Two-Subband occupation in a Strained Ge Channel: B. Rössner, H. von Känel, D. Chrastina, G. Isella and B. Batlogg
ICSI-4, Awaji Island, Hyogo, Japan, May 2005.
Temperature dependent mobility spectra in SiGe heterostructures: Daniel Chrastina, James P. Hague, Giovanni Isella, Benjamin Rößner, and Hans von Känel
INFM Si workshop, Genova, Italy, February 2003.

PhD

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My PhD. thesis was in semiconductor physics. Originally, I was working on some coupled 2-dimensional electron and hole gas systems. My supervisor was Dr. David R. Leadley.

The devices were silicon-germanium heterostructures, designed by Dr. John Emeleus who left Warwick and went to Glasgow in February 1997.

Also, I've worked on some p-channel HMOSFET devices which were fabricated by Siemens. This work involved some device simulation. I worked on another p-channel system looking at weak localization and the Quantum Hall - Insulator transition. I worked on an n-channel system with Ryan Ferguson of Imperial College, and I ended up developing a new method of mobility spectrum analysis, based on Bryan's Algorithm Maximum Entropy, with Jim Hague which we have written up into a paper:

Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices

D. Chrastina, J. P. Hague and D. R. Leadley
J. Appl. Phys. 94 (10) 6583-6590 (2003).

This article may be found at http://link.aip.org/link/?jap/94/6583.

DOI: 10.1063/1.1621719

(See also the cond-mat version.)

I was EPSRC funded.

Opinions expressed on these pages are subject to change without notice. They do not necessarily reflect the views of anyone.

Resources

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The NASA Astrophysics Data System, which contains over a million records in the Physics and Geophysics section. It gives you BibTeX entries for citations.
Online Journals of the American Institute of Physics, incorporating PROLA, the Physical Review Online Archive.
Electronic Journals at the Institute of Physics.
Web of Knowledge.
scholar.google.com.
http://arxiv.org/archive/cond-mat, The Condensed Matter e-Print Server.
Science Direct.
Datasheets.

Anyway, here are some science/physics/whatever web sites for your perusal.

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Ben Goldacre's BadScience.net.
PhysOrg.com for the latest physics and technology news.
Sense about science, an independent charitable trust promoting good science and evidence in public debates.
The Union of Concerned Scientists.
Britney Spears guide to Semiconductor Physics with special emphasis on semiconductor lasers.
Transgressing the Boundaries: Towards a Transformative Hermeneutics of Quantum Gravity by Alan Sokal, an article published in Social Text.
More important postmodernism...
The Museum of Unworkable Devices.
Annals of Improbable Research.
Nanoshite.
General nonsense.
Lionel Milgrom.
Time wasting.

Last updated: 10^th November 2008

Email: danny at chrastina dot net