Silicon Germanium (SiGe) Heterostructures

The idea is that you start with a substrate of silicon, and grow on that a layer of silicon-germanium alloy. Then you cap it with more silicon, generally. The thing is, though, that germanium has a lattice constant that is 4.17% larger than that of silicon, so the alloy either strains to match up or relaxes and dislocates. This is a pseudomorphic structure.

An alternative is to grow some alloy on a silicon substrate, and let the strain relax. This forms a virtual substrate. Then an alloy with a higher germanium content may be grown on this, with less strain than it would have if it had been grown on pure silicon. Or, pure silicon may be grown on the alloy.

LEPECVD is a great way to grow SiGe.

My own publications are listed on the research page, but there are many other review articles which you should read if you are interested in this field. Here are some:

Mobility-Enhancement Technologies
Chee Wee Liu, S. Maikap and C.-Y. Yu
IEEE Circuits and Devices Magazine 21 (3) 21-36 (2005).

This article may be found at http://dx.doi.org/10.1109/MCD.2005.1438752.

Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee, Eugene A. Fitzgerald, Mayank T. Bulsara, Matthew T. Currie and Anthony Lochtefeld
J. Appl. Phys. 97 (1) 011101 (2005).

This article may be found at http://link.aip.org/link/?jap/97/011101.

DOI: 10.1063/1.1811976

Copyright © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Si/SiGe heterostructures: from material and physics to devices and circuits
D. J. Paul
Semicond. Sci. Technol. 19 (10) R75-R108 (2004).

This article may be found at http://stacks.iop.org/0268-1242/19/R75

DOI: 10.1088/0268-1242/19/10/R02

Copyright © 2004 Institute of Physics Publishing Ltd.

SiGe heterostructures for FET applications
T. E. Whall and E. H. C. Parker
Journal of Physics D: Applied Physics 31 (12) 1397-1416 (1998).

This article may be found at http://stacks.iop.org/0022-3727/31/1397

DOI: 10.1088/0022-3727/31/12/003

Copyright © 1997 Institute of Physics Publishing Ltd.

Silicon germanium heterostructures in electronics: The present and the future
D. J. Paul
Thin Solid Films 321 (1-2) 172-180 (1998).

This article may be found at http://dx.doi.org/10.1016/S0040-6090(98)00469-6.

Thin Solid Films via scienceserver.cilea.it.

Copyright © 1998 Elsevier Ltd.

High-mobility Si and Ge structures
Friedrich Schäffler
Semicond. Sci. Technol. 12 (12) 1515-1549 (1997).

This article may be found at http://stacks.iop.org/0268-1242/12/1515

DOI: 10.1088/0268-1242/12/12/001

Copyright © 1997 Institute of Physics Publishing Ltd.

Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
Herbert Kroemer
Rev. Mod. Phys. 73 (3) 783-793 (2001).

This article may be found at http://link.aps.org/abstract/RMP/v73/p783.

DOI: 10.1103/RevModPhys.73.783

Copyright © 2001 The American Physical Society.

Nobel Lecture: The double heterostructure concept and its applications in physics, electronics, and technology
Zhores I. Alferov
Rev. Mod. Phys. 73 (3) 767-782 (2001).

This article may be found at http://link.aps.org/abstract/RMP/v73/p767.

DOI: 10.1103/RevModPhys.73.767

Copyright © 2001 The American Physical Society.

Electronic properties of two-dimensional systems
Tsuneya Ando, Alan B. Fowler and Frank Stern
Rev. Mod. Phys. 54 (2) 437-672 (1982).

This article may be found at http://link.aps.org/abstract/RMP/v54/p437.

DOI: 10.1103/RevModPhys.54.437

Copyright © 1982 The American Physical Society.

Some books

The Physics of Low-Dimensional Semiconductors
John H. Davies. Cambridge University Press (1998)
Physics and Applications of Semiconductor Microstructures
Milan Jaros. Clarendon Press (1989)
Semiconductor Devices: Physics and Technology
Simon M. Sze. John Wiley & Sons (1985)
Physics of Semiconductor Devices
Simon M. Sze. John Wiley & Sons (1981)

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Copyright © 2004-2006 Danny Chrastina

Last updated: 20th December 2006

Email: danny at chrastina dot net

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